Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Geyer, Scott (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06995415
ABSTRACT:
A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectric15and a plate electrode16bof the planar capacitor are provided over a trench shared with a shallow trench isolation12a,and the upper part of the trench is filled with the capacitance dielectric15and the plate electrode16b.An n-type diffusion layer19that is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolation12a.The area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.
REFERENCES:
patent: 181162 (1986-05-01), None
patent: 1039470 (2000-09-01), None
patent: 82-134963 (1987-06-01), None
patent: 63-24657 (1988-02-01), None
patent: 6-302778 (1994-10-01), None
patent: 11-284146 (1999-10-01), None
Egashira Kyoko
Hashimoto Shin
Kajiya Atsuhiro
Nakaoka Hiroaki
Ogawa Hisashi
Geyer Scott
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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