Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2006-12-05

2006-12-05

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21638, C257SE21639

Reexamination Certificate

active

07144780

ABSTRACT:
The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that can accommodate high voltages for high breakdown voltage MOS transistors and miniaturization of MOS transistors for low voltage drive. Its constitution provides for inner side wall insulating films14and24and outer side wall insulating films16and26formed at both sides of the gate electrodes12and22in both high breakdown voltage transistor TR2and transistor TR1for low voltage drive, and heavily doped region27is formed in breakdown voltage transistor TR2using both inner side wall insulating film24and outer side wall insulating film26as masks so that offset D2is controlled by the combined widths of the two side wall insulating films. In transistor TR1 for low voltage drive, heavily doped region15is formed using only inner side wall insulating film14as the mask, and offset d1is controlled.

REFERENCES:
patent: 5527722 (1996-06-01), Hutter et al.
patent: 6157064 (2000-12-01), Huang
patent: 6512258 (2003-01-01), Maeda
patent: 6777283 (2004-08-01), Maeda
patent: 6847080 (2005-01-01), Komori et al.
patent: 2002/0052086 (2002-05-01), Maeda
patent: 2003/0094636 (2003-05-01), Maeda

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