Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2006-01-03

2006-01-03

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000

Reexamination Certificate

active

06982198

ABSTRACT:
A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

REFERENCES:
patent: 5200353 (1993-04-01), Inuishi
patent: 6359300 (2002-03-01), Economikos et al.
patent: 6436760 (2002-08-01), Wong et al.
patent: 6552380 (2003-04-01), Sato et al.
patent: 2002/0142571 (2002-10-01), Noguchi
patent: 2002/0171099 (2002-11-01), Sato et al.
patent: 2000-269462 (2000-09-01), None

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