Semiconductor device and its manufacture method, and...

Details Semiconductor device and its manufacture method, and... Semiconductor device and its manufacture method, and...

2007-07-10

2007-07-10

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000

Reexamination Certificate

active

11440061

ABSTRACT:
A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

REFERENCES:
patent: 5621606 (1997-04-01), Hwang
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6432767 (2002-08-01), Torii et al.

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