Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

2007-10-16

2007-10-16

Elms, Richard T. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000

Reexamination Certificate

active

11180786

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

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European Search Report dated Jun. 23, 2006.

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