Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2008-10-15

2010-06-29

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C257SE21415, C257SE21421

Reexamination Certificate

active

07745299

ABSTRACT:
In order to diversify a current control method of a semiconductor device, improve performance (including a current drive performance) of the semiconductor device, and reduce a size of the semiconductor device, a second gate may be formed inside a substrate that forms a channel upon applying a bias voltage thereto. In one aspect, the semiconductor device includes: a well region of a first conductivity; source and drain regions of a second conductivity in the well region; a first gate on an oxide layer above the well region, controlling a first channel region of a second conductivity between the source region and the drain region; and a second gate under the first channel region.

REFERENCES:
patent: 5294556 (1994-03-01), Kawamura
patent: 6632710 (2003-10-01), Takahashi
patent: 2005/0087802 (2005-04-01), Park
patent: 2005/0202623 (2005-09-01), Ookubo et al.
patent: 2005/0258473 (2005-11-01), Yoshida et al.

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