Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-03-10
2009-02-10
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S750000, C257S780000, C257SE23021, C257SE21508, C438S612000, C438S613000
Reexamination Certificate
active
07489037
ABSTRACT:
A semiconductor device and a fabrication method thereof are proposed. A first dielectric layer is formed on a semiconductor substrate having at least one bond pad, wherein the first dielectric layer has a first opening for exposing the bond pad and a second opening at a predetermined position for redistribution. A first metallic layer is applied on the first dielectric layer and in the first and second openings. A second metallic layer and a third metallic layer are formed on the first metallic layer at positions corresponding to the first and second openings, respectively. A second dielectric layer and a solder bump are formed on the second and third metallic layers, respectively. The second metallic layer can assure electrical quality of the first metallic layer corresponding to the first opening without having an electrical break of the first metallic layer for redistribution.
REFERENCES:
patent: 6656826 (2003-12-01), Ishimaru
patent: 7091121 (2006-08-01), Horng
patent: 7223683 (2007-05-01), Lin
patent: 2003/0153172 (2003-08-01), Yajima et al.
patent: 2004/0266163 (2004-12-01), Horng
patent: 2006/0019480 (2006-01-01), Cheng et al.
patent: 2006/0073693 (2006-04-01), Huang
patent: 543125 (1991-05-01), None
Chen Yi-Hsin
Chien Feng-Lung
Suo Chao-Dung
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Quach Tuan N.
Siliconware Precision Industries Co. Ltd.
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