Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2011-01-04

2011-01-04

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21190, C438S529000

Reexamination Certificate

active

07863147

ABSTRACT:
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

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patent: 5478761 (1995-12-01), Komori et al.
patent: 6133081 (2000-10-01), Kim
patent: 6309940 (2001-10-01), Lee
patent: 2006/0270103 (2006-11-01), Das et al.

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