Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2007-02-20

2009-06-23

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S527000, C438S161000, C438S217000, C438S232000, C438S257000

Reexamination Certificate

active

07550357

ABSTRACT:
A semiconductor device with a low drain current in the off-state of LDD type accommodating high voltages is provided. On the thermal oxide film, a polysilicon film and a CVD oxide film, and a resist pattern are formed, then the CVD oxide film is side-etched for formation of a CVD oxide film which is after the etching one-size smaller than the polysilicon film. Using the resist pattern as a mask, an impurity is implanted at a high concentration for formation of a source/drain region at a high concentration in an area which does not overlap with the polysilicon film. Further, the resist pattern is removed, and using the CVD oxide film as a mask, an impurity is implanted at a low concentration for formation of an LDD region of a low concentration in an area which overlaps with the gate electrode of the polysilicon film.

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