Semiconductor device and electronic device

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S189050, C365S230060

Reexamination Certificate

active

07742351

ABSTRACT:
In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.

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Hiroki Dembo et al,: “RFCPUs on Glass and Plastic Substrates fabricated by TFT Transfer Technology”;IEEE, Technical Digest of International Electron Devices Meeting; pp. 1067-1069; Dec. 5, 2005.

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