Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-12-11
2007-12-11
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185110, C365S185040
Reexamination Certificate
active
11127712
ABSTRACT:
The semiconductor device includes a memory cell array that includes memory cells for storing data and is managed on a sector basis, a memory that stores the information determining the activation status, a latch circuit that latches the activation information according to the information stored in the memory, and a circuit that latches the activation information according to the information stored in the memory in the latch circuit. The activation information according to the memory state of the memory is latched at the time of inputting a given command after activation, and it is thus possible to read the information stored in the memory and set the information in the latch circuit certainly.
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Kido Kazunari
Kurihara Kazuhiro
Yamashita Minoru
Hoang Huan
Spansion LLC
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