Semiconductor device and associated methods

Details Semiconductor device and associated methods Semiconductor device and associated methods

2009-09-11

2011-10-25

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S380000, C257S406000, C257S410000, C257S412000

Reexamination Certificate

active

08044469

ABSTRACT:
A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode.

REFERENCES:
patent: 6893927 (2005-05-01), Shah et al.
patent: 6897095 (2005-05-01), Adetutu et al.
patent: 7169681 (2007-01-01), Cho et al.
patent: 2008/0050870 (2008-02-01), Yamamoto
patent: 2007-537595 (2007-12-01), None
patent: 2008-053283 (2008-03-01), None
patent: 10-2005-0036005 (2005-04-01), None
patent: 10-2007-0017555 (2007-02-01), None

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