Semiconductor device and a process of manufacturing the same

Details Semiconductor device and a process of manufacturing the same Semiconductor device and a process of manufacturing the same

1996-09-30

1998-07-14

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257296, 257754, H01L 2348, H01L 2904

Patent

active

057808708

ABSTRACT:
A semiconductor device is provided for convenient checking of etching states of semiconductor layers, along with a process for its preparation, wherein a test layer is formed on the same wafer where a semiconductor product is manufactured, and concurrently with and under the same formation conditions as formation a target layer forming a part of the semiconductor product, wherein the test layer is formed on a first layer and on a second layer interposed between a portion of the test layer and the first layer, with one of the first and second layers having the same etching properties as the target layer and the other of the first and second layers having different etching characteristics from the target layer. After etching the test layer and target layer concurrently to form holes in each the amount of the etching of the holes can be measured by an electron microscope, and the amount of etching in the target layer of the semiconductor product is controlled from the state of the etching reaching to the lower layer, either the first or second layer, below the test layer.

REFERENCES:
patent: 5321296 (1994-06-01), Shouno
patent: 5466971 (1995-11-01), Higuchi
patent: 5495439 (1996-02-01), Morihara
Chemical Abstracts, No. 1-68932.
Chemical Abstracts, No. 4-137644.

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