Semiconductor device and a method of manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S315000

Reexamination Certificate

active

11240375

ABSTRACT:
A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.

REFERENCES:
patent: 5946230 (1999-08-01), Shimizu et al.
patent: 6489650 (2002-12-01), Kumazaki
patent: 2000-188346 (2000-07-01), None
patent: 2001-085541 (2001-03-01), None
patent: 2003-168748 (2003-06-01), None

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