Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2006-08-08

2006-08-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S603000, C438S604000

Reexamination Certificate

active

07087474

ABSTRACT:
A method of manufacturing a semiconductor device having a field effect transistor with improved current driving performance (increase of drain current) includes the steps of ion implanting a group IV element from the main surface to the inside of a silicon layer serving as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer serving as a semiconductor substrate so as to form a semiconductor region which is aligned with the gate electrode.

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patent: 6437406 (2002-08-01), Lee
patent: 6682965 (2004-01-01), Noguchi et al.
patent: 6955973 (2005-10-01), Niwa
patent: 2000-082678 (2000-03-01), None

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