Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S592000
Reexamination Certificate
active
07105394
ABSTRACT:
A method of manufacturing a semiconductor device having an n-type FET and p-type FET, each formed over a semiconductor substrate, calls for (a) forming, over the n-type FET and p-type FET, a first insulating film, for generating a tensile stress in the channel formation region of the n-type FET, to cover gate electrodes of the FETs, while covering, with an insulating film, a semiconductor region between the gate electrode of the p-type FET and an element isolation region of the semiconductor substrate; (b) selectively removing the first insulating film from the upper surface of the p-type FET by etching; (c) forming, over the n-type and p-type FETs, a second insulating film, for generating a compressive stress in the channel formation region of the p-type FET, to cover gate electrodes of the FETs; and (d) selectively removing the second insulating film from the upper surface of the n-type FET.
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Hachimine Kiyota
Ooki Nagatoshi
Sakai Satoshi
Shimizu Akihiro
Yamamoto Naoki
Antonelli, Terry Stout and Kraus, LLP.
Hitachi ULSI Systems Co., LTD
Nguyen Khiem
Renesas Technology Corp.
Smith Matthew
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