Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-25
2006-07-25
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S349000
Reexamination Certificate
active
07081390
ABSTRACT:
Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible to prevent formation of a moat at the top corners of the device isolation film and the gate oxide film from being thinly formed, thereby improving reliability and electrical characteristics of the device.
REFERENCES:
patent: 4820654 (1989-04-01), Lee
patent: 5516710 (1996-05-01), Boyd et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 100219523 (1999-06-01), None
patent: 1020010061560 (2001-07-01), None
Cho Heung Jae
Lee Jung Ho
Lim Kwan Yong
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
Vu David
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