Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-09
2011-08-09
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S216000, C438S217000, C438S229000, C438S230000, C438S231000, C438S232000, C438S275000, C438S276000, C438S289000
Reexamination Certificate
active
07994012
ABSTRACT:
To improve characteristics of a semiconductor device having a nonvolatile memory. There is provided a semiconductor device having a nonvolatile memory cell that performs memory operations by transferring a charge to/from a charge storage film, wherein the nonvolatile memory cell includes a p well formed in a principal plane of a silicon substrate, and a memory gate electrode formed over the principal plane across the charge storage film, and wherein a memory channel region located beneath the charge storage film of the principal plane of the silicon substrate contains fluorine.
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Au Bac H
Miles & Stockbridge P.C.
Picardat Kevin M
Renesas Electronics Corporation
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