Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-03
1998-06-02
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438384, 438396, 438554, H01L 218234
Patent
active
057598878
ABSTRACT:
A method of manufacturing a semiconductor integrated circuit (IC) includes the steps of forming a polycrystalline silicon layer containing impurities on a semiconductor substrate; forming an oxidation-resistant insulating layer on the polycrystalline silicon layer; simultaneously forming resist patterns for forming a capacitor element and a resistor element on the oxidation-resistant insulating layer; and patterning the oxidation-resistant insulating layer and the polycrystalline silicon layer in sequence using resist patterns.
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Ayabe Masayuki
Ito Takao
Bowers Jr. Charles L.
Kabushiki Kaisha Toshiba
Thomas Toniae M.
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