Semiconductor device and a method of manufacture therefor

Details Semiconductor device and a method of manufacture therefor Semiconductor device and a method of manufacture therefor

2005-06-27

2010-10-12

Smith, Matthew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257SE21122

Reexamination Certificate

active

07811944

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a substrate, and a graded capping layer located over the substrate, wherein the graded capping layer includes at least two different layers, wherein first and second layers of the at least two different layers have different stress values.

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Van de Ven et al. (“van de Ven” Evert P. van de Ven “Advantages of Dual Frequency PECVD for deposition of ILD and passivation films” VMIC Conference Jun. 13, 1990 pp. 194-201.
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Parent case U.S. Appl. No. 10/778,454, filed Feb. 13, 2004 entitled “A Semiconductor Device and a Method of Manufacture Therefor” to Nace Rossi, et al; currently pending.

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