Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-07-28
1996-12-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257758, H01L 27108
Patent
active
055833578
ABSTRACT:
A semiconductor device using a self-aligned contact and a method for manufacturing the same is disclosed. A gate electrode having a first spacer formed on the sidewalls thereof is formed on a semiconductor substrate. Active regions which are spaced apart from each other by the gate electrode are formed in the semiconductor substrate. A bitline having a second spacer formed on the sidewalls thereof is formed on the gate electrode and the active regions. A self-aligned contact is formed on the active regions and a first pad electrode connected with the active region through the contact is formed between the bitlines. A bitline contact is formed on the bitline, and second and third pad electrodes, which are respectively connected with the bitline and the first pad electrode through the bitline contact, are formed on the bitline. Thus, the alignment tolerances of the bitline contact and the storage-node contact are maximized, so that a reliable semiconductor device can be realized.
REFERENCES:
patent: 5172202 (1992-12-01), Kazuo
Jackson Jerome
Kelley Nathan K.
Samsung Electronics Co,. Ltd.
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