Semiconductor device and a method for manufacturing the same

Details Semiconductor device and a method for manufacturing the same Semiconductor device and a method for manufacturing the same

2006-02-09

2008-09-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S258000, C438S266000

Reexamination Certificate

active

07419869

ABSTRACT:
Provided is a manufacturing method of a semiconductor device which has the following steps of forming a plurality of layered patterns obtained by stacking an insulating film, a conductor film for forming a floating gate electrode and another insulating film over a semiconductor substrate in the order of mention, forming sidewalls over the side surfaces of the plurality of layered patterns, removing a damage layer of the semiconductor substrate between any two adjacent layered patterns by dry etching, forming an insulating film over the semiconductor substrate between two adjacent layered patterns, and forming a plurality of assist gate electrodes over the insulating film between two adjacent layered patterns in self alignment therewith. According to the present invention, a semiconductor device having a flash memory has improved reliability.

REFERENCES:
patent: 7064380 (2006-06-01), Fukumura et al.
patent: 7282411 (2007-10-01), Kanamitsu et al.
patent: 2002/0192887 (2002-12-01), Adachi et al.
patent: 2003/0122181 (2003-07-01), Wu
patent: 2006/0001081 (2006-01-01), Sasago et al.
patent: 2001-028428 (2001-01-01), None
patent: 2004-152977 (2004-05-01), None

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