Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-15
2008-07-15
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S786000, C257SE23021
Reexamination Certificate
active
11482764
ABSTRACT:
By preparing a package substrate which has a plurality of lands of NSMD structure, and the output wiring and dummy wiring which were connected to each of the lands, and have been arranged mutually in location of 180° symmetry, and printing solder by a printing method to the lands after the package assembly, the variation in the height of the solder coat between lands can be reduced, and improvement in the mountability of LGA (semiconductor device) is achieved.
REFERENCES:
patent: 6943100 (2005-09-01), Chinda et al.
patent: 2004/0043537 (2004-03-01), Tomihara
patent: 9-232736 (1997-09-01), None
patent: 2000-031630 (2000-01-01), None
Kanemoto Koichi
Kawakukbo Hiroshi
Kikuchi Takashi
Sugiyama Michiaki
Miles & Stockbridge P.C.
Renesas Technology Corp.
Smith Matthew S.
Swanson Walter H
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