Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-15

2011-03-15

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S620000, C257S774000, C438S623000, C438S637000

Reexamination Certificate

active

07906848

ABSTRACT:
In a semiconductor device having a Low-k film as an interlayer insulator, peeling of the interlayer insulator in a thermal cycle test is prevented, thereby providing a highly reliable semiconductor device. In a semiconductor device having a structure in which interlayer insulators in which buried wires each having a main electric conductive layer made of copper are formed and cap insulators of the buried wires are stacked, the cap insulator having a relatively high Young's modulus and contacting by its upper surface with the interlayer insulator made of a Low-k film having a relatively low Young's modulus is formed so as not to be provided in an edge portion of the semiconductor device.

REFERENCES:
patent: 7141882 (2006-11-01), Watanabe
patent: 7635907 (2009-12-01), Ueda
patent: 2005/0087872 (2005-04-01), Abe
patent: 2005/0093169 (2005-05-01), Kajita
patent: 2006/0055005 (2006-03-01), Furusawa et al.
patent: 2005-129961 (2005-05-01), None
patent: 2005-136003 (2005-05-01), None
patent: 2006-80369 (2006-03-01), None
patent: 2006-147653 (2006-06-01), None
patent: 2006-318988 (2006-11-01), None

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