Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257SE29055, C257SE29118, C257SE29131, C257SE29274, C257SE29318
Reexamination Certificate
active
07999309
ABSTRACT:
In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
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Chung Hyun-Woo
Kim Hui-jung
Kim Hyun-Gi
Kim Kang-Uk
Oh Yong-chul
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Soward Ida M
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