Semiconductor device

Details Semiconductor device Semiconductor device

2011-04-19

2011-04-19

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S283000, C257S315000, C438S264000, C438S296000

Reexamination Certificate

active

07928494

ABSTRACT:
The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.

REFERENCES:
patent: 6482658 (2002-11-01), Kang et al.
patent: 6646303 (2003-11-01), Satoh et al.
patent: 7072208 (2006-07-01), Min et al.
patent: 7256459 (2007-08-01), Shino
patent: 7306552 (2007-12-01), Choi et al.
patent: 7423310 (2008-09-01), Verhoeven
patent: 5-82467 (1993-04-01), None
patent: 2001-111013 (2001-04-01), None
Japanese Office Action with English translation dated Dec. 14, 2010 in Japanese Patent Application No. 2005-291231, 5 pages.

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