Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-09

2011-08-09

Ton, David (Department: 2117)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Memory testing

C365S201000

Reexamination Certificate

active

07996735

ABSTRACT:
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

REFERENCES:
patent: 5254382 (1993-10-01), Ueno et al.
patent: 5883827 (1999-03-01), Morgan
patent: 7075140 (2006-07-01), Spadea
patent: 7438965 (2008-10-01), Ohkura et al.
patent: 7573058 (2009-08-01), Noh et al.
patent: 7692979 (2010-04-01), Fuji et al.
patent: 7777213 (2010-08-01), Kang et al.
patent: 2003/0002367 (2003-01-01), Hong et al.
patent: 2007/0248785 (2007-10-01), Nakai et al.
patent: 2009/0073753 (2009-03-01), Osada et al.
patent: 2002-109797 (2002-04-01), None
patent: 2003-100991 (2003-04-01), None
patent: 2005-050424 (2005-02-01), None
patent: 2003-0002419 (2003-01-01), None
Stefan Lai et al, “OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, IEEE, IEDM pp. 803-806, 2001.
Martijn H .R. Lankhorst et al, “Low-cost and nanoscale non-volatile memory concept for future silicon chips”, Nature Materials, vol. 4, pp. 347-352, 2005.
Myoung-Jae Lee et al, “2-Stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications”, IEEE, IEDM pp. 771-774, 2007.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656510