Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-11

2011-01-11

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

C257S782000, C257S781000, C257S780000, C257SE21514

Reexamination Certificate

active

07868467

ABSTRACT:
A semiconductor device includes a first substrate, a plurality of cell transistors and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The plurality of cell transistors is formed extending on the first surface of the first substrate in a direction. The second substrate has an upper surface making contact with the second surface of the first substrate. Further, the upper surface of the second substrate has a bent structure to apply tensile stresses to the first substrate in the extending direction of the plurality of cell transistors. Thus, tensile stresses may be applied to the first substrate to improve the mobility of carriers in a channel region of the cell transistors.

REFERENCES:
patent: 5461774 (1995-10-01), Holmes et al.
patent: 5801084 (1998-09-01), Beasom et al.
patent: 6308938 (2001-10-01), Futakuchi
patent: 2006/0141742 (2006-06-01), Fournel et al.
patent: 2007/0257336 (2007-11-01), Matsumoto
patent: 11-102985 (1999-04-01), None
patent: 1999-0030681 (1999-07-01), None
United States Patent No. 6,308,938 corresponding to Foreign Document No. JP 11-102985.

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