Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-17
2011-05-17
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000, C257SE29345
Reexamination Certificate
active
07943978
ABSTRACT:
In a semiconductor device, the semiconductor device may include a first active structure, a first gate insulation layer, a first gate electrode, a first impurity region, a second impurity region and a contact structure. The first active structure may include a first lower pattern in a first region of a substrate and a first upper pattern on the first lower pattern. The first gate insulation layer may be formed on a sidewall of the first upper pattern. The first gate electrode may be formed on the first gate insulation layer. The first impurity region may be formed in the first lower pattern. The second impurity region may be formed in the first upper pattern. The contact structure may surround an upper surface and an upper sidewall of the first upper pattern including the second impurity region. Accordingly, the contact resistance between the contact structure and the second impurity region may be decreased and structural stability of the contact structure may be improved.
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Chung Hyun-Woo
Kim Hui-jung
Kim Hyun-Gi
Kim Kang-Uk
Oh Yong-chul
Harness & Dickey & Pierce P.L.C.
Lee Eugene
Samsung Electronics Co,. Ltd.
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