Semiconductor device

Details Semiconductor device Semiconductor device

2000-03-20

2001-11-13

Clark, Sheila V. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S777000, C257S686000

Reexamination Certificate

active

06316838

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to semiconductor devices and methods for producing the same, and more particularly to a semiconductor device and a method for producing the semiconductor device, which is configured to have a plurality of semiconductor elements stacked therein.
In recent years, with increasing demand for miniaturized portable equipment such as a portable telephone, a semiconductor device that is installed therein has also been required to have a smaller size. In order to support this situation, a stack-type semiconductor device, which has a plurality of semiconductor elements stacked within resin for encapsulation (a package) thereof, is developed.
2. Description of the Related Art
FIG. 1
shows a conventional stack-type semiconductor device
1
, comprising a plurality of semiconductor elements
2
,
3
(two in this diagram) which are carried by a stage portion
5
a
of a plurality of leads
5
.
Specifically, the semiconductor element
2
is installed under the stage portion
5
a
and the semiconductor element
3
is installed on the stage portion
5
a
, each with adhesive
12
and in a face-up state. Accordingly, electrodes
7
provided on the semiconductor element
2
and electrodes
8
provided on the semiconductor element
3
face away from the stage portion
5
a.
The electrodes
7
and
8
are connected to bonding pads
5
c
of the leads
5
by wires
10
and
11
, respectively. Also, outer leads
5
b
of the leads
5
are formed extending out of encapsulating resin
6
, for example, like a gull wing.
Thus, by installing the plurality of semiconductor elements within the encapsulating resin
6
, the semiconductor device
1
can be produced with a smaller size and lighter weight, compared to a semiconductor device where the semiconductor elements are separately packaged.
In the semiconductor device
1
where the plurality of semiconductor elements are installed, however, in a case where a plurality of wires are simultaneously bonded to one bonding pad
5
c
to connect electrodes, electrical characteristics and signal characteristics of the electrodes need to be equal. That is, the electrodes to be connected by the wires should be equi-electrodes.
As shown in
FIG. 1
, if the semiconductor element
2
and the semiconductor element
3
are the same type semiconductor elements just different in size, then the electrodes
7
and
8
of the semiconductor elements
2
and
3
are the same in electrode layout. Accordingly, in a case where the semiconductor element
2
is directly stacked on the semiconductor element
3
, two up-and-down adjacent electrodes
7
and
8
become equi-electrodes, and therefore can be connected by a wire running up and down.
In the conventional semiconductor device
1
, however, the leads
5
(the stage portion
5
a
) are interposed between the semiconductor elements
2
and
3
as shown in FIG.
1
. According to this configuration, the electrodes
7
of the semiconductor element
2
and the electrodes
8
of the semiconductor element
3
are symmetrical with respect to the stage portion
5
a
, respectively. That is, the electrodes
7
have a mirror relationship with the electrodes
8
, respectively. But two electrodes
7
and
8
that have the mirror relationship are not equi-electrodes even if the semiconductor elements
2
and
3
are the same type semiconductor elements because those equi-electrodes
7
and
8
are separated in a diagonal, not an up-and-down, relationship. Therefore, in the conventional semiconductor device
1
, the wire cannot be directly connected between the two up-and-down electrodes
7
and
8
.
Accordingly, in a case of wiring those equi-electrodes
7
and
8
that are thus separated, the wires
10
and
11
need to be each laid with a large angle, and thereby a problem is brought about that the wiring becomes troublesome and easy to generate a short circuit due to contact of the wires.
In order to make the up-and-down electrodes
7
and
8
be equi-electrodes available connection, in a case where the semiconductor element
2
is different from the semiconductor element
3
in structure and the semiconductor element
2
is set as a standard, the semiconductor element
3
needs to be re-designed and re-produced so that the electrode layout thereof can have the mirror relationship with that of the semiconductor element
2
. This brings about a cost increase in producing the semiconductor device
1
.
SUMMARY OF THE INVENTION
It is a general object of the present invention to provide a semiconductor device, in which the above problems are eliminated.
Another and a more specific object of the present invention is to provide a semiconductor device, comprising:
a substrate;
a plurality of connecting terminals provided on said substrate;
a first semiconductor element provided on a first surface of said substrate in a face-down state;
a second semiconductor element provided on a second surface, opposite to said first surface, of said substrate and connected to said substrate by wires; and
an extended wiring mechanism formed on said substrate for connecting electrodes of said first semiconductor element and electrodes of said second semiconductor element, said connected electrodes being equi-electrodes whose electrical characteristics are equal.
Other objects, features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.


REFERENCES:
patent: 5495398 (1996-02-01), Takiar et al.
patent: 6100594 (2000-08-01), Fukui et al.
patent: 6104084 (2000-08-01), Ishio et al.
patent: 6118176 (2000-09-01), Tao et al.
patent: 6118184 (2000-09-01), Ishio et al.
patent: 6181002 (2001-01-01), Juso et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2573245