Semiconductor device

Details Semiconductor device Semiconductor device

1998-11-17

2001-03-20

Tran, Minh Loan (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S781000, C257S705000, C257S698000, C257S708000, C257S795000, C257S780000

Reexamination Certificate

active

06204563

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a structure of a semiconductor device, and particularly to a substrate package having an internal substrate.
2. Description of the Related Art
Portable devices have rapidly been widespread in recent years. According to their widespread use, plastic molded type semiconductor devices mounted in the portable devices also need ones brought into less thickness, size and weight at present. Many types of packages have been proposed to cope with these.
There is known, as one example thereof, one wherein a semiconductor element or elemental device provided with bumps on a circuit forming surface is provided so that the bumps are joined to conductive pattern portions of an internal substrate with conductive patterns formed on its surface, a gap or clearance defined between these is charged with a resin, and solder balls for connection of an external substrate are provided on the back of the internal substrate.
SUMMARY OF THE INVENTION
With the foregoing in view, it is therefore an object of the present invention to reduce cracks produced in solder balls by a thermal shock like a temperature cycle after the placement of an external substrate.
According to one aspect of this invention, for achieving the above object, there is provided a semiconductor device, comprising:
a semiconductor element provided with a plurality of protruded electrodes on the surface thereof; and
an internal substrate having one surface on which conductive patterns electrically connected to the protruded electrodes are formed, and the other surface opposite to one surface thereof, on which external electrodes providing continuity of the conductive patterns via through holes are formed. The internal substrate has a thermal expansion coefficient having a value in the neighborhood of a thermal expansion coefficient of an external substrate and has a Young's modulus larger than that of the external substrate.
Typical ones of various inventions of the present application have been shown in brief. However, the various inventions of the present application and specific configurations of these inventions will be understood from the following description.


REFERENCES:
patent: 4825284 (1989-04-01), Soga et al.
patent: 5998861 (1999-12-01), Hiruta

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