Static information storage and retrieval – Read/write circuit – Precharge
Patent
1999-07-15
2000-06-27
Phan, Trong
Static information storage and retrieval
Read/write circuit
Precharge
36523003, 365233, G11C 700, G11C 800
Patent
active
060814683
ABSTRACT:
To suppress the power-on current flowing when power is tuned on in the circuit which feeds precharging current to the bit lines of the banks in a synchronous DRAM comprising a multi-bank structure. The device comprises a plurality of bank circuits BKi which are all of the same structure, wherein the bit line precharging power supply lines which the respective bank circuits have are connected in common, a first precharging power supply circuit which has its output node connected to the precharging power supply line and starts its precharging current feed operation when the power supply in the DRAM chip is turned on, and a second precharging power supply circuit which has its output node connected to the precharging power supply line and starts its precharging current feed operation after the bit line has been raised to a predetermined potential by the precharging current of the first precharging power supply circuit.
REFERENCES:
patent: 5642314 (1997-06-01), Yamauchi
patent: 5815451 (1998-09-01), Tsuchida
patent: 5896328 (1999-04-01), Tanizaki et al.
Imai Kimimasa
Taira Takashi
Kabushiki Kaisha Toshiba
Phan Trong
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1789771