Semiconductor device

Details Semiconductor device Semiconductor device

1999-05-18

2000-03-28

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257219, 257226, 257349, 257352, H01L 29786

Patent

active

060435364

ABSTRACT:
In a semiconductor device including a full depletion MISFET transistor made by using a SOI layer and intended to stabilize a predetermined threshold value while holding the threshold value sensitivity to fluctuation in thickness of the SOI layer even upon changes in impurity concentration of a channel region of the MISFET transistor by changing a back gate voltage in accordance with the impurity concentration of the channel region, thickness of the SOI layer is determined to reduce changes in threshold value, and impurity concentration of the channel region is measured by using a detector element to adjust the back gate voltage in response to the measured value. Thus, the desired threshold voltage can be maintained.

REFERENCES:
S. Cristloveanu, et al., pp. 112-120, "Electrical Characterization of Silicon-On-Insulator Materials and Devices", 1995.
M.J. Van Dort, et al., IEDM 91, pp. 495-498, "Quantum-Mechanical Threshold Voltage Shifts of MOSFET's Caused by High Levels of Channel Doping", 1991.
J.W. Slotboom, et al., IEEE Transactions on Electron Devices, vol. ED-24, No. 8, pp. 1123-1125, "Bandgap Narrowing in Silicon Bipolar Transistors", Aug. 1977.
D.K. Ferry, pp. 46-51, "Quantum Mechanics for the Device Physics", 1996.

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