Semiconductor device

Details Semiconductor device Semiconductor device

2004-05-25

2011-11-08

Ho, Hoang-Quan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S186000, C365S218000, C257S324000, C257S326000, C257SE29309

Reexamination Certificate

active

08054680

ABSTRACT:
Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.

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