Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-11
2011-10-18
Dickey, Thomas L. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29018, C257SE27013
Reexamination Certificate
active
08039905
ABSTRACT:
A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.
REFERENCES:
patent: 6613633 (2003-09-01), Oh
patent: 2005/0167749 (2005-08-01), Disney
patent: 2006/0192255 (2006-08-01), Kim et al.
patent: 10-1999-0081054 (1999-11-01), None
patent: 10-0302611 (2001-07-01), None
Choe Jeong-Dong
Jang Dong-Hoon
Kim Ki-Hyun
Yoon Young-Bae
Dickey Thomas L.
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Yushin Nikolay
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