Semiconductor device

Details Semiconductor device Semiconductor device

2005-09-20

2010-06-01

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S217000, C438S257000, C438S258000, C438S266000, C438S275000, C438S294000, C438S301000, C438S392000, C438S407000, C438S440000, C438S545000, C438S586000, C438S595000, C257S319000, C257S372000, C257S392000, C257S399000, C257S402000

Reexamination Certificate

active

07727831

ABSTRACT:
The leakage current generated due to the extension of the depleted layer to the end of the chip is reduced. In MOSFET100, the depths of the trenches112in the gate pad portion50and the circumference portion70are larger than the depths of the trenches111in the cell region60. Therefore, the depleted layer extending from the cell region60along the direction toward the gate pad portion50or the direction toward the circumference portion70is blocked by the presence of the trench112. In other words, an extending of the depleted layer can be terminated by disposing the trench112, so as to avoid reaching the depleted layer to the end of the semiconductor chip. Accordingly, a leakage current generated from the cell region60along the direction toward the end of the semiconductor chip can be reduced.

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