Semiconductor device

Details Semiconductor device Semiconductor device

1998-01-05

2000-04-25

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, H01L 27108

Patent

active

060547308

ABSTRACT:
A semiconductor device comprises a transistor having a gate, a source, and a drain, one of the source and drain being a first end, and the other being a second end, and a capacitor comprising a storage node connected to the first end and a plate electrode, wherein a current flowing between the source and drain when a potential Va is applied to the second end and a potential Vb, which is lower than Va, is applied to the storage node is smaller than a current flowing the source and the drain when a potential Vb is applied to the second end and a potential Va is applied to the storage node, while the potential of the gate and the potential of the plate electrode are maintained to be constant. Here, the transistor should preferably be a MIS-type.

REFERENCES:
patent: 5547885 (1996-08-01), Ogoh
patent: 5796136 (1998-08-01), Shinkawata
patent: 5828096 (1998-10-01), Ohno et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-995213