Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2009-04-21
2010-11-16
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S127000, C257S170000, C257S409000, C257S484000
Reexamination Certificate
active
07834351
ABSTRACT:
A semiconductor device is disclosed. The device includes a substrate and a first wiring layer overlying the substrate. The first wiring layer comprises a first wiring area surrounded by a first seal ring. The first seal ring comprises a first monitor circuit isolated by a first dielectric layer embedded in the first seal ring. The first monitor circuit is responsive to a predetermined amount of deformation occurs in the third dielectric layer.
REFERENCES:
patent: 6300223 (2001-10-01), Chang et al.
patent: 6441465 (2002-08-01), Lin et al.
patent: 6753608 (2004-06-01), Tomita
patent: 6861754 (2005-03-01), Lin et al.
patent: 7397103 (2008-07-01), Archer et al.
patent: 7538346 (2009-05-01), Chen et al.
patent: 2004/0084777 (2004-05-01), Yamanoue et al.
patent: 2004/0150070 (2004-08-01), Okada et al.
patent: 2006/0214798 (2006-09-01), Wang
patent: 2008/0191205 (2008-08-01), Tsai et al.
patent: 2008/0230873 (2008-09-01), Demircan et al.
Chen Hsien-Wei
Chen Hsueh-Chung
Hsu Shih-Hsun
Mandala Victor A
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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