Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-31
2010-11-09
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21442, C257SE29274
Reexamination Certificate
active
07829932
ABSTRACT:
Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.
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European Search Report dated May 26, 2010 in corresponding European Application No. 07150240.5.
Byun Sung-jae
Cho Kyoung-Iae
Hyun Jae-woong
Kim Suk-pil
Kim Won-joo
Budd Paul A
Harness & Dickey & Pierce P.L.C.
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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