Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S066000, C257S314000, C257S315000, C257SE27103, C257SE29300

Reexamination Certificate

active

07635891

ABSTRACT:
A semiconductor device includes a semiconductor substrate, and a memory cell array provided on the semiconductor substrate and including a plurality of memory cells arranged on the semiconductor substrate, each of the plurality of the memory cells including a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer, and a control electrode containing metal or metal silicide provided on the charge storage layer via the second insulating film, wherein a corner of a lower part of the control electrode includes semiconductor and fails to contain the metal or the metal silicide in a channel width direction view of the memory cell.

REFERENCES:
patent: 2005/0199956 (2005-09-01), Ding
patent: 2006/0166421 (2006-07-01), Kamioka et al.
patent: 2007/0029603 (2007-02-01), Lee et al.
patent: 2007/0099363 (2007-05-01), Nakajima et al.
patent: 2000-101052 (2000-04-01), None
patent: 2000-200841 (2000-07-01), None
patent: 2005-129942 (2005-05-01), None
patent: 10-2003-0080239 (2003-10-01), None
patent: 10-2006-0033500 (2006-04-01), None
Notification for Filing Opinion mailed Sep. 29, 2008, from the Korean Patent Office in counterpart Korean Application No. 10-2007-122539.

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