Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-05-02
2009-02-03
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S635000, C257S637000
Reexamination Certificate
active
07485949
ABSTRACT:
A semiconductor device is disclosed. The device includes a substrate, a first porous SiCOH dielectric layer, a second porous SiCOH dielectric layer, and an oxide layer. The first porous SiCOH dielectric layer overlies the substrate. The second porous SiCOH dielectric layer overlies the first porous SiCOH dielectric layer. The oxide layer overlies the second porous SiCOH dielectric layer. The atomic percentage of carbon in the second porous SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
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patent: 7135398 (2006-11-01), Fitzsimmons et al.
patent: 2005/0023693 (2005-02-01), Fitzsimmons et al.
patent: 2005-350653 (2005-12-01), None
Chou Chia-Cheng
Jeng Shwang-Ming
Ko Chung-Chi
Lin Keng-Chu
Wu Zhen-Cheng
Birch & Stewart Kolasch & Birch, LLP
Clark S. V
Taiwan Semiconductor Manufacturing Co. Ltd.
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