Semiconductor device

Details Semiconductor device Semiconductor device

Filed on

2006-12-13

Date issued

2008-12-30

Examiner

Ho, Tu-Tu V (Department: 2818)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S273000, C438S589000, C257S330000, C257SE21419

Type

Reexamination Certificate

Status

active

Patent number

07470589

Description

ABSTRACT:
A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device, a silicon nitride film is over the gate electrode and embedded up to a point close to the open edge on the inside of trench. A source electrode is formed in contact with the surface of the silicon nitride film and the surface of the source region.

REFERENCES:
patent: 5148257 (1992-09-01), Kishi
patent: 6319784 (2001-11-01), Yu et al.
patent: 6861701 (2005-03-01), Williams et al.
patent: 6884684 (2005-04-01), Huang et al.
patent: 2002/0130359 (2002-09-01), Okumura et al.
patent: 2002/0137306 (2002-09-01), Chen
patent: 2003/0080378 (2003-05-01), Zundel et al.
patent: 2002-280553 (2002-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4047984