Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-28

2008-05-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S257000, C438S264000, C438S266000, C438S267000, C438S297000, C257SE21546

Reexamination Certificate

active

07374999

ABSTRACT:
A semiconductor device includes a substrate including a high-voltage transistor area provided with a high-voltage transistor and a low-voltage transistor area provided with a low-voltage transistor; a LOCOS layer provided as a device isolation layer of the high-voltage transistor area; and a shallow-trench isolation layer provided as a device isolation layer of the low-voltage transistor area. Accordingly, a sufficient breakdown voltage level can be provided in a high-voltage transistor area, on-resistance and leakage current can be enhanced, and the chip area in a low-voltage transistor area can be reduced.

REFERENCES:
patent: 5930644 (1999-07-01), Tsai et al.
patent: 2005/0029616 (2005-02-01), Noda et al.

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