Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S493000
Reexamination Certificate
active
11481247
ABSTRACT:
A semiconductor device having high ruggedness is provided. The distance Wm2between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1between buried regions positioned at the bottom of the same base diffusion region (Wm1>Wm2). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.
REFERENCES:
patent: 2007/0045776 (2007-03-01), Kunori et al.
patent: 62-169368 (1987-07-01), None
patent: 3-54868 (1991-03-01), None
patent: 3-155677 (1991-07-01), None
patent: 3-238871 (1991-10-01), None
patent: 7-221192 (1995-08-01), None
patent: 2000-77662 (2000-03-01), None
Kitada Mizue
Kunori Shinji
Kuriyama Masahiro
Mikawa Masato
Ohshima Kosuke
Kratz Quintos & Hanson, LLP
Prenty Mark V.
Shindengen Electric Manufacturing Co. Ltd.
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