Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-14
2007-08-14
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
11038929
ABSTRACT:
A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p+gate and an n+source are contiguous. An insulating film is formed on the surface of an n−channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.
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S. Harada et al., “Back-Gate 4H-SiC JFET Fabricated on N-Type Substrate”, The Japan Society of Applied Physics, The 61stAutumn Meeting, 2000.
Onose Hidekatsu
Watanabe Atsuo
Doan Theresa T.
Hitachi , Ltd.
Hogan & Hartson LLP
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