Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-24
2007-04-24
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S271000, C438S272000, C438S587000, C438S588000, C438S589000
Reexamination Certificate
active
10967657
ABSTRACT:
A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than that of the buried regions. Therefore, since avalanche breakdown occurs in an active region, causing an avalanche breakdown current to flow through the active region having a large area, current concentration does not occur. As a result, a ruggedness of an element against breakdown is increased.
REFERENCES:
patent: 3335296 (1967-08-01), Smart
patent: 3391287 (1968-07-01), Kao
patent: 3541403 (1970-11-01), Lepselter
patent: 4754310 (1988-06-01), Coe
patent: 5081509 (1992-01-01), Kozaka
patent: 5148241 (1992-09-01), Sugita
patent: 5216275 (1993-06-01), Chen
patent: 5241195 (1993-08-01), Tu
patent: 5438215 (1995-08-01), Tihanyi
patent: 5801417 (1998-09-01), Tsang et al.
patent: 5883411 (1999-03-01), Ueda
patent: 6124612 (2000-09-01), Tihanyi et al.
patent: 6184545 (2001-02-01), Werner
patent: 6204097 (2001-03-01), Shen
patent: 6404032 (2002-06-01), Kitada
patent: 6573559 (2003-06-01), Kitada
patent: 6621132 (2003-09-01), Onishi et al.
patent: 6693011 (2004-02-01), Wahl et al.
patent: 2003/0042555 (2003-03-01), Kitada
patent: 2003/0160262 (2003-08-01), Kitada
patent: 2003/0203576 (2003-10-01), Kitada
patent: 1 130 653 (2001-09-01), None
patent: 1 139 433 (2001-10-01), None
patent: 1 289 022 (2003-03-01), None
patent: 1 339 105 (2003-08-01), None
patent: 1 341 238 (2003-09-01), None
patent: 2001-244462 (2001-09-01), None
patent: 2001-284604 (2001-12-01), None
patent: 2003-69017 (2003-03-01), None
patent: 2003-243671 (2003-08-01), None
patent: 2003-258270 (2003-09-01), None
Kitada Mizue
Kunori Shinji
Kurosaki Toru
Ohshima Kosuke
Shishido Hiroaki
Armstrong Kratz Quintos Hanson & Brooks, LLP
Au Bac H.
Shindengen Electric Manufacturing Co. Ltd.
Smith Zandra V.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3786309