Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-10

2006-10-10

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S687000, C257S700000, C257S723000, C438S107000, C438S109000

Reexamination Certificate

active

07119428

ABSTRACT:
A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an “Si” interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.

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