Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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Details

C257S687000, C257S700000, C257S723000, C438S107000, C438S109000

Reexamination Certificate

active

07119428

ABSTRACT:
A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an “Si” interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.

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patent: 5229647 (1993-07-01), Gnadinger
patent: 6141245 (2000-10-01), Bertin et al.
patent: 6492718 (2002-12-01), Ohmori
patent: 59-222954 (1984-12-01), None
patent: 61-088546 (1986-05-01), None
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patent: 08-236694 (1996-09-01), None
patent: 11-040745 (1999-02-01), None
patent: 2000-286380 (2000-10-01), None

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