Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-05
2005-04-05
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S410000
Reexamination Certificate
active
06875662
ABSTRACT:
The invention offers a highly reliable semiconductor device with high yields. The semiconductor device includes a silicon substrate, a gate insulating film formed on one main plane of a silicon substrate and mainly including zirconium oxide of hafnium oxide, and a gate electrode film formed in contact with the gate insulating film. The gate insulating film contains an additional element for stabilizing the amorphous state.
REFERENCES:
patent: 6060755 (2000-05-01), Ma et al.
patent: 6489648 (2002-12-01), Iwasaki et al.
patent: 20030030117 (2003-02-01), Iwasaki et al.
Lecture No. 3.3 of the Extended Abstracts of International Workshop on Gate Insulator 2001, pp 56-60, Nov. 1-2, 2001.
Benito deCelis, et al.Journal of Applied Physics, Molecular dynamics simulation of crack tip processes in alpha-iron and cooper, vol. 54 (1984), p 4877.
Dr. Dieter W. Heermann, “Computer Simulation Methods in Theoretical Physics (1989)”, Spring Verlag, pp 23-25.
T. Kwok, et al., Physical Review B, “Molecular-dynamics studies of grain-boundary diffusion. II Vacancy migration, diffusion mechanism, and kinetics”, May 15, 1984, vol. 29, pp 5367-5369.
N. Bernstein, et al., Physical Review B, “Amorphous-crystal Interface in silicon: A tight-binding simulation”, Aug. 15, 1998-II, vol. 58, pp 4579-4581.
Iwasaki Tomio
Miura Hideo
Antonelli Terry Stout & Kraus LLP
Chaudhuri Olik
Hitachi Kokusai Electric Inc.
Kebede Brook
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3369054