Semiconductor contact via structure and method

Details Semiconductor contact via structure and method Semiconductor contact via structure and method

1993-11-24

1995-08-22

Fourson, George

Fishing, trapping, and vermin destroying

437228, 437947, 437 51, H01L 2170, H01L 2700

Patent

active

054440190

ABSTRACT:
A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive region. An opening is then formed through the insulating region to the conductive region. A thin barrier layer is deposited over the integrated circuit contact structure. A portion of the thin barrier layer is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall remains. Finally, a conductive metal layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer is deposited.

REFERENCES:
patent: 4878105 (1989-10-01), Hirakawa et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 5117273 (1992-05-01), Stark et al.
patent: 5279990 (1994-01-01), Sun et al.

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