Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-18
1995-05-23
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257752, 257753, H01L 2978
Patent
active
054183880
ABSTRACT:
In a semiconductor device and a method of manufacturing the same, adhesion between a capacitor dielectric film made of material having a high dielectric constant and an interlayer insulating film located thereunder is improved, and a leak current from a capacitor lower electrode is effectively prevented. In the semiconductor device, an adhesion layer (11) made of TiO.sub.2, ZrO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 or Al.sub.2 O.sub.3 is interposed between the interlayer insulating film made of a silicon oxide film and the capacitor dielectric film made of material having a high dielectric constant. The adhesion layer improves adhesion between the interlayer insulating film and the capacitor dielectric film.
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Etched Shape Control of Single Crystalline Silicon in Reactive Ion Etching Containing Chlorine, Masaaki Sato et al. 1985 Dry Process Symposium, pp. 102-107.
"A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sup.3 For 256M DRAM", Kuniaki Koyama et al., 1991 IEEE, pp. 32.1.1-32.1.4.
Kuroiwa Takeharu
Okudaira Tomonori
Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
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